| PART |
Description |
Maker |
| ML74WLAC |
NAND Gate (unbuffered) and Inverter (unbuffered)
|
Minilogic Device Corporation Limited
|
| ML74WLBC |
NOR Gate (unbuffered) and Inverter (unbuffered)
|
Minilogic Device Corporation Limited
|
| ML74WLBD |
NOR Gate (unbuffered) and AND Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
| MC74HCU04ADR2G MC74HCU04ADG |
Hex Unbuffered Inverter High−Performance Silicon−Gate CMOS HC/UH SERIES, HEX 1-INPUT INVERT GATE, PDSO14
|
ON Semiconductor
|
| KK74HCU04A KK74HCU04AD KK74HCU04AN |
Hex Unbuffered Inverters High-Performance Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| M374S6553BTS-C7A M366S2953BTS-C7A M366S3354BTS M36 |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| HYMD216726A6-H HYMD216726A6-K HYMD216726A6-L HYMD2 |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|M/K/H/L|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR
2150 A, 1500 V, SYMMETRICAL GTO SCR
820 A, 4000 V, GATE TURN-OFF SCR
1685 A, 2700 V, GATE TURN-OFF SCR
870 A, 600 V, GATE TURN-OFF SCR
700 A, 600 V, GATE TURN-OFF SCR
730 A, 1000 V, GATE TURN-OFF SCR
890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
